*Abstract:

The basic content of spintronics is to store, transmit and process spin information by controlling the spin angular momentum of electrons. As one of the most advanced technologies in spintronics, the current-induced spin-orbit torque can efficiently drive magnetization switching, and is expected to be used in the next generation of magnetic random access memory. Recently, we studied the spin-orbit torque in epitaxial metal thin film systems, and achieved out-of-plane spin-orbit torque [1] and bulk spin-orbit torque [2] by breaking more symmetries (low crystal symmetry and composition gradient), and realized the current-induced perpendicular magnetization switching at zero magnetic field in a single-layer ferromagnetic metal film [3]. This report will discuss how to design the spin-orbit torque and its application in the field of information storage from the perspective of symmetry analysis, and also explore the development of spintronics devices using oxide heterostructures [4,5] and topological semimetals [6].

*Profile：

Liu Liang received his Bachelor's degree from the School of Physics at Huazhong University of Science and Technology in 2011, and his Ph.D. degree from the School of Physics at Peking University in 2016. He worked as a postdoctoral researcher and senior postdoctoral researcher at the National University of Singapore from 2016 to 2022. In September 2022, he joined the School of Physics and Astronomy at Shanghai Jiao Tong University as a tenure-track associate professor and Ph.D. supervisor. His current research interests include spintronics and its applications in the field of information storage (epitaxial magnetic thin film growth, micro-nanodevice fabrication), topological superconducting quantum computing (devices related to Majorana zero modes), charge and spin transport in topological quantum materials (small signal measurements at extremely low temperatures and strong magnetic fields), and noise in electronic devices (1/f noise, shot noise).