No.439 Gateless Image Sensor based on Graphene/HfO2/Si integration
来源: 作者: 发布时间:2024-04-09contact person: Professor Yang
reporter: Dr. Ali Imran
time: 2024-04-09
place: Centre For Quantum Physics 229
profile:
*Title:Gateless Image Sensor based on Graphene/HfO2/Si integration |
*Reporter:Dr. Ali Imran *Time: 9:00 ~ 12:00 at Apr. 9st, 2024. *Place:Centre For Quantum Physics 229 *Contact Person: Professor Yang |
*Abstract: The demand for imaging devices has surged exponentially during the last decade owing to their exceptionally high quality and low noise imaging. However, they are still confronting the performance constraints of high operation power, low speed, and limited charge integration. In the present research work, we demonstrate the gateless image sensing based on the electric-dipole gated phototransistor without external gate bias by using high-k dielectric material. The device integrates the photovoltaic, field effect, and tunable fermi level properties of Si, HfO2, and Graphene to create a non-destructive readout system. The sensor exhibits remarkable performance in the broadband spectrum range (266-1342 nm) at a low drain bias voltage of 0.5 V. The high values of responsivity, external quantum efficiency, and detectivity of 3.7×103 A W-1, 0.72×104 and 6.20×1013 cmHz½ W-1, respectively for 800 nm wavelength and 3.3×103 A W-1, 1.31×104, and 5.61×1013 cmHz½ W-1, respectively for 400 nm wavelength are achieved. This discovery can eliminate the requirement for gate terminal from commercial image sensing devices. The power efficient features of the device can be fabricated at the industrial scale for the future machine vision market. |
*Profile: Dr. Ali Imran is a Senior Research Fellow at Zhejiang University, specializing in Optoelectronics devices such as Photosensors, Photodetectors, Phototransistors, and Solar Cells. His work focuses on Neuromorphic Vision Sensors fabrication, integrating 2D/3D materials, high-k dielectrics, and Ferroelectrics. He excels in device fabrication and characterization techniques, with research interests in HfO2, HAO, HZO, InAs, GaAs, InN, GaN, AlN, MoS2, h-BN, and Graphene based devices. He received the Distinguished International Researcher Award from the Beijing Institute of Technology and has 32 research articles, 1 patent, and 1 book, published in respected journals and conferences. Dr. Imran was a postdoctoral fellow at Peking University before joining Zhejiang University in 2021, where he also collaborates with the Hangzhou Global Innovation and Technology Center. |