9001cc.s金沙登录“博约学术沙龙”系列报告
(总第 100 期)

时  间：   2015年4月23日（星期4）下午4:10
地  点：   中心教学楼610
报告一：博士生报告 时间：16:10-16:40
题  目：基于Mn掺杂ZnSe纳米结构的稀磁半导体性质的研究
报告人： 侯丽鹏                  指导老师： 邹炳锁
摘要：
  硒化锌是一种重要的二六族直接带隙的半导体材料，过渡金属掺杂的硒化锌纳米结构在电学、光学领域与硒化锌体材料有显著的不同。本文简单地对稀磁半导体（DMS）的发展历史及研究现状进行了归纳总结，并对锰掺杂硒化锌纳米结构在不同温度和功率下的的一些特殊性质和机理进行简单的介绍。

报告二：博士生报告 时间：16:40-17:10
题  目：    Dynamic model based on voltage transfer curve for pattern formation in dielectric barrier glow discharge
报告人：        李犇                     
指导老师：欧阳吉庭
摘要：

As a nonlinear dissipative system, gas discharge can be modeled based on reaction-diffusion equations for studying the self-organization of discharge patterns. Previous works have witnessed reaction-diffusion model for patterns in dc gas discharge systems with high-ohmic semiconductor layers. In this paper, we introduce a one-component coupled-map model based on voltage transfer curve (VTC), which reveals the important relationship between the voltage transfer in a pulsed discharge and the initial gap voltage, to study pattern formation in dielectric barrier glow discharges. In this model, the gap voltage corresponds to the reactant concentration, VTC serves as the dynamical function, and the effect of non-uniform seed electrons on the initial gap voltage represents the diffusion term. As the only component, the voltage drop induced by high-density seed electrons serves as either the short-range activator that enhances the local discharge or the long-range inhibitor that weakens the discharge in the lateral neighborhoods. One- and two- dimensional simulations are presented, which is in good accordance with the experimental results and fluid modeling. This model provides a convenient and effective method to investigate gas-discharge patterns.

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